{"title":"Recent Performance of Nonpolar and Semipolar GaN-Based Light Emitting Diodes and Laser Diodes","authors":"D. Feezell, S. Denbaars, J. Speck, S. Nakamura","doi":"10.1109/CSICS07.2007.47","DOIUrl":null,"url":null,"abstract":"This article discusses recent advances of nonpolar and semipolar GaN-based light emitting diodes (LEDs) and laser diodes (LDs). Devices fabricated on these alternative orientations are already beginning to realize significant performance milestones. Nonpolar GaN has been employed to facilitate high-power LEDs and to realize CW operation of novel AlGaN-cladding-free LD structures. Semipolar GaN has also been successfully used to demonstrate LDs and to realize high-power, high-efficiency green LEDs.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS07.2007.47","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This article discusses recent advances of nonpolar and semipolar GaN-based light emitting diodes (LEDs) and laser diodes (LDs). Devices fabricated on these alternative orientations are already beginning to realize significant performance milestones. Nonpolar GaN has been employed to facilitate high-power LEDs and to realize CW operation of novel AlGaN-cladding-free LD structures. Semipolar GaN has also been successfully used to demonstrate LDs and to realize high-power, high-efficiency green LEDs.
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