TLP Generator Setup for Reliable Switching Characterization of Commercial GaN HEMTs

Abstract

This paper proposes an automated setup to reliably characterize the soft switching behavior of commercial GaN HEMTs under pulsed measurements, based on the Transmission Line Pulse (TLP) generator principle. The proposed setup allows for high voltage - high current measurements while keeping the device under test within safe thermal conditions. Additionally, the setup follows the guidelines outlined on the JEDEC JEP173 standard, Dynamic ON-Resistance Test Method Guidelines for GaN HEMT based Power Conversion Devices, guaranteeing reliability and repeatability for a wide range of test conditions. This setup is suitable for characterizing several commercially available GaN HEMT structures such as enhancement and depletion mode devices in cascode or planar p-GaN gate structures. Results showed a non-monotonic behavior on the current collapse phenomenon, for tested planar p-GaN gate HEMT, as drain to source voltage increased. Also, the device ON resistance went significantly down as drain voltage approached to the rated limit.