{"title":"Analysis of ultra-high-speed image sensor based on drift-diffusion model","authors":"L. T. Yen, N. Minamitani, Y. Kamakura, T. Etoh","doi":"10.1109/IMFEDK.2016.7521668","DOIUrl":null,"url":null,"abstract":"Electron travel time distribution in the backside illuminated in-situ storage image sensor (BSI ISIS) is analyzed based on the drift diffusion model coupled with the light-absorption model. Dependence of the variation on the various device design parameters and physical conditions is discussed. It is shown that the ultimate highest frame rate is dependent on the light absorption coefficient.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"434 20","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2016.7521668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Electron travel time distribution in the backside illuminated in-situ storage image sensor (BSI ISIS) is analyzed based on the drift diffusion model coupled with the light-absorption model. Dependence of the variation on the various device design parameters and physical conditions is discussed. It is shown that the ultimate highest frame rate is dependent on the light absorption coefficient.
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