Analysis And Design Of Ptat Temperature Sensor In Digital CMOS VLSI Circuits

A. Golda, A. Kos
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引用次数: 16

Abstract

The paper presents theoretical analyses, simulations and design of a PTAT (proportional to absolute temperature) temperature sensor that is based on the vertical PNP structure and dedicated to CMOS VLSI circuits. Performed considerations take into account specific properties of materials that forms electronic elements. The electrothermal simulations are performed in order to verify the unwanted self-heating effect of the sensor
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数字CMOS VLSI电路中温度传感器的分析与设计
本文介绍了一种基于垂直PNP结构、专用于CMOS VLSI电路的PTAT (proportional to absolute temperature)温度传感器的理论分析、仿真和设计。执行的考虑考虑到形成电子元件的材料的特定属性。为了验证传感器的自热效应,进行了电热模拟
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