Study of wafer warpage for Fan-Out wafer level packaging: finite element modelling and experimental validation

A. Salahouelhadj, M. Gonzalez, K. Vanstreels, A. Podpod, A. Phommahaxay, K. Rebibis, E. Beyne
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引用次数: 4

Abstract

Wafer warpage is a big challenge during wafer process in Fan-Out Wafer-Level-Packaging (FOWLP). It is crucial to keep warpage low as much as possible for successful process integration. The warpage is mainly due to the Coefficient of Thermal Expansion (CTE) mismatch between the involved materials during temperature changes. Furthermore, warpage of molded wafers depends on material properties. Therefore, accurate material characterization has great importance. In this paper, thermal-mechanical properties of the used polymeric materials were measured using nanoindentation and Stereo-Digital Image Correlation (SDIC). In this study, warpage of molded wafers with and without Temporary Bonding Adhesive (TBA) is investigated during heating to 200°C and cooling down to room temperature. SDIC technique was used to measure the warpage of molded wafers. Finally, Finite Element (FE) simulations were carried out using as input the measured thermal-mechanical properties. A comparison between warpage measurements and FE simulation at different temperatures showed a good agreement.
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扇出式晶圆级封装的晶圆翘曲研究:有限元模型与实验验证
圆片翘曲是扇出式圆片级封装(FOWLP)过程中的一大难题。对于成功的过程集成来说,尽可能地保持低翘曲是至关重要的。翘曲主要是由于温度变化时材料之间的热膨胀系数(CTE)不匹配造成的。此外,模制晶圆的翘曲取决于材料的性能。因此,准确的材料表征具有重要意义。本文采用纳米压痕和立体数字图像相关(SDIC)技术测量了聚合物材料的热力学性能。在这项研究中,研究了在加热到200°C和冷却到室温的过程中,有和没有临时粘合粘合剂(TBA)的模制晶圆的翘曲。采用SDIC技术对模制晶圆的翘曲进行了测量。最后,以测量的热力学性能作为输入,进行有限元模拟。不同温度下的翘曲量测结果与有限元模拟结果吻合较好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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