T. Kimoto, H. Niwa, N. Kaji, T. Kobayashi, Y. Zhao, S. Mori, M. Aketa
{"title":"Progress and future challenges of SiC power devices and process technology","authors":"T. Kimoto, H. Niwa, N. Kaji, T. Kobayashi, Y. Zhao, S. Mori, M. Aketa","doi":"10.1109/IEDM.2017.8268360","DOIUrl":null,"url":null,"abstract":"Recent progress in SiC device physics and development of power devices in the authors' group is reviewed. The impact ionization coefficients in the wide temperature range were determined, which enables accurate device simulation. 13 kV SiC pin diodes with a very low differential on-resistance of 1.4 mΩ.cm2 and 11 kV SiC epitaxial MPS diodes are presented. A mobility-limiting factor in SiC MOSFETs is discussed, and 3 kV reverse-blocking MOSFETs are demonstrated.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2017.8268360","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
Recent progress in SiC device physics and development of power devices in the authors' group is reviewed. The impact ionization coefficients in the wide temperature range were determined, which enables accurate device simulation. 13 kV SiC pin diodes with a very low differential on-resistance of 1.4 mΩ.cm2 and 11 kV SiC epitaxial MPS diodes are presented. A mobility-limiting factor in SiC MOSFETs is discussed, and 3 kV reverse-blocking MOSFETs are demonstrated.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
