Y. Liu, T. Nabatame, T. Matsukawa, K. Endo, S. O'Uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, T. Chikyow, M. Masahara
{"title":"Charge trapping type FinFET flash memory with Al2O3 blocking layer","authors":"Y. Liu, T. Nabatame, T. Matsukawa, K. Endo, S. O'Uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, T. Chikyow, M. Masahara","doi":"10.1109/S3S.2013.6716572","DOIUrl":null,"url":null,"abstract":"In this paper, as a further study, we fabricated charge trapping type SOI-FinFET flash memories with different blocking layers of Al<sub>2</sub>O<sub>3</sub> and SiO<sub>2</sub>, and comparatively investigate their electrical characteristics.","PeriodicalId":219932,"journal":{"name":"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2013.6716572","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this paper, as a further study, we fabricated charge trapping type SOI-FinFET flash memories with different blocking layers of Al2O3 and SiO2, and comparatively investigate their electrical characteristics.
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