Chee-Wei Lee, D. Ng, M. Ren, Y. Fu, Anthony Yew Seng Kay, V. Krishnamurthy, Jing Pu, Ai Ling Tan, F. Tjiptoharsono, Soo Bin Choo, Qian Wang
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引用次数: 0
Abstract
We demonstrate electrically-pumped III-V quantum-well lasers bonded on SiO2 with a metal-coated etched-mirror. The metal-coated etched-mirror allow the lasers to be used as on-chip laser, but our process design make sure that it requires no additional fabrication step to fabricate the metal-coated etched mirror. The bonded III-V on SiO2 also permits tight laser mode confinement in the active region due to high index contrast between III-V and SiO2. Moreover, it promises a flexible choice of host substrate, in which the silicon substrate could also be replaced with other materials. The laser devices demonstrated have the lowest threshold of 50 mA, a maximum output power of 9 mW and a differential quantum efficiency of 27.6%.
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