I. Azevedo, Elizabeth Sandford-Richardson, M. Richardson, L. Bernardo, Helder Crespo
In this series of digital art holograms and lenticulars, we used the HoloCam Portable Light System with the 35 mm cameras, Canon IS3 and the Canon 700D, to capture the image information, it was then edited on the computer using Motion 5 and Final Cut Pro X programs. We are presenting several actions in the digital holographic space. The figures are in dialogue within the holographic space and the viewer, in front of the holographic plate. In holography the time of the image is the time of the viewer present. And that particular feature is what distinguishes digital holography from other media.
在这一系列的数字艺术全息图和透镜中，我们使用了holam便携式照明系统与35毫米相机，佳能IS3和佳能700D，捕捉图像信息，然后在电脑上使用Motion 5和Final Cut Pro X程序进行编辑。我们在数字全息空间中呈现几个动作。这些人物在全息空间内与观众对话，在全息板的前面。在全息摄影中，图像的时间就是观者在场的时间。而这个特殊的特性正是数字全息术区别于其他媒体的地方。
{"title":"Silent images in dialogue","authors":"I. Azevedo, Elizabeth Sandford-Richardson, M. Richardson, L. Bernardo, Helder Crespo","doi":"10.1117/12.2212391","DOIUrl":"https://doi.org/10.1117/12.2212391","url":null,"abstract":"In this series of digital art holograms and lenticulars, we used the HoloCam Portable Light System with the 35 mm cameras, Canon IS3 and the Canon 700D, to capture the image information, it was then edited on the computer using Motion 5 and Final Cut Pro X programs. We are presenting several actions in the digital holographic space. The figures are in dialogue within the holographic space and the viewer, in front of the holographic plate. In holography the time of the image is the time of the viewer present. And that particular feature is what distinguishes digital holography from other media.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126884450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Aalto, M. Harjanne, B. Offrein, C. Caër, C. Neumeyr, A. Malacarne, M. Guina, R. Sheehan, F. Peters, P. Melanen
We present a vision for the hybrid integration of advanced transceivers at 1.3 μm wavelength, and the progress done towards this vision in the EU-funded RAPIDO project. The final goal of the project is to make five demonstrators that show the feasibility of the proposed concepts to make optical interconnects and packet-switched optical networks that are scalable to Pb/s systems in data centers and high performance computing. Simplest transceivers are to be made by combining directly modulated InP VCSELs with 12 μm SOI multiplexers to launch, for example, 200 Gbps data into a single polymer waveguide with 4 channels to connect processors on a single line card. For more advanced transceivers we develop novel dilute nitride amplifiers and modulators that are expected to be more power-efficient and temperatureinsensitive than InP devices. These edge-emitting III-V chips are flip-chip bonded on 3 μm SOI chips that also have polarization and temperature independent multiplexers and low-loss coupling to the 12 μm SOI interposers, enabling to launch up to 640 Gbps data into a standard single mode (SM) fiber. In this paper we present a number of experimental results, including low-loss multiplexers on SOI, zero-birefringence Si waveguides, micron-scale mirrors and bends with 0.1 dB loss, direct modulation of VCSELs up to 40 Gbps, ±0.25μm length control for dilute nitride SOA, strong band edge shifts in dilute nitride EAMs and SM polymer waveguides with 0.4 dB/cm loss.
{"title":"Integrating III-V, Si, and polymer waveguides for optical interconnects: RAPIDO","authors":"T. Aalto, M. Harjanne, B. Offrein, C. Caër, C. Neumeyr, A. Malacarne, M. Guina, R. Sheehan, F. Peters, P. Melanen","doi":"10.1117/12.2214786","DOIUrl":"https://doi.org/10.1117/12.2214786","url":null,"abstract":"We present a vision for the hybrid integration of advanced transceivers at 1.3 μm wavelength, and the progress done towards this vision in the EU-funded RAPIDO project. The final goal of the project is to make five demonstrators that show the feasibility of the proposed concepts to make optical interconnects and packet-switched optical networks that are scalable to Pb/s systems in data centers and high performance computing. Simplest transceivers are to be made by combining directly modulated InP VCSELs with 12 μm SOI multiplexers to launch, for example, 200 Gbps data into a single polymer waveguide with 4 channels to connect processors on a single line card. For more advanced transceivers we develop novel dilute nitride amplifiers and modulators that are expected to be more power-efficient and temperatureinsensitive than InP devices. These edge-emitting III-V chips are flip-chip bonded on 3 μm SOI chips that also have polarization and temperature independent multiplexers and low-loss coupling to the 12 μm SOI interposers, enabling to launch up to 640 Gbps data into a standard single mode (SM) fiber. In this paper we present a number of experimental results, including low-loss multiplexers on SOI, zero-birefringence Si waveguides, micron-scale mirrors and bends with 0.1 dB loss, direct modulation of VCSELs up to 40 Gbps, ±0.25μm length control for dilute nitride SOA, strong band edge shifts in dilute nitride EAMs and SM polymer waveguides with 0.4 dB/cm loss.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126421177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The recently established American Institute for Manufacturing Photonics (AIM Photonics) is a manufacturing consortium headquartered in New York, with funding from the US Department of Defense (DoD), New York State, and industrial partners to advance the state of the art in the design, manufacture, testing, assembly, and packaging of integrated photonic devices. Dr. Michael Liehr, CEO of AIM Photonics, will describe the technical goals, operational framework, near-term milestones, and opportunities for the broader photonics community. The Institute intends to organize a currently fragmented domestic capability in integrated photonics. AIM Photonics will develop and demonstrate innovative manufacturing technologies for a number of key application sectors for integrated photonics devices. The Institute will furthermore specifically focus on establishing and building out an infrastructure in key areas required to accelerate the further adoption of integrated photonics. Specifically, we will enhance the available hardware development capability to include Si-based Multi-Project Wafer runs, InP-based Photonic Integrated Circuits, first and second level packaging, test and assembly.
{"title":"Merging photonics with nanoelectronics (Conference Presentation)","authors":"M. Liehr","doi":"10.1117/12.2225039","DOIUrl":"https://doi.org/10.1117/12.2225039","url":null,"abstract":"The recently established American Institute for Manufacturing Photonics (AIM Photonics) is a manufacturing consortium headquartered in New York, with funding from the US Department of Defense (DoD), New York State, and industrial partners to advance the state of the art in the design, manufacture, testing, assembly, and packaging of integrated photonic devices. Dr. Michael Liehr, CEO of AIM Photonics, will describe the technical goals, operational framework, near-term milestones, and opportunities for the broader photonics community. The Institute intends to organize a currently fragmented domestic capability in integrated photonics. AIM Photonics will develop and demonstrate innovative manufacturing technologies for a number of key application sectors for integrated photonics devices. The Institute will furthermore specifically focus on establishing and building out an infrastructure in key areas required to accelerate the further adoption of integrated photonics. Specifically, we will enhance the available hardware development capability to include Si-based Multi-Project Wafer runs, InP-based Photonic Integrated Circuits, first and second level packaging, test and assembly.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116966947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This presentation first reviews the historical development of the field of nonlinear optics, starting from its inception in 1961. It then reviews some of its more recent developments, including especially how nonlinear optics has become a crucial tool for the developing field of quantum technologies. Fundamental quantum processes enabled by nonlinear optics, such as the creation of squeezed and entangled light states, are reviewed. We then illustrate these concepts by means of specific applications, such as the development of secure communication systems based on the quantum states of light.
{"title":"Quantum nonlinear optics: nonlinear optics meets the quantum world (Conference Presentation)","authors":"R. Boyd","doi":"10.1117/12.2225038","DOIUrl":"https://doi.org/10.1117/12.2225038","url":null,"abstract":"This presentation first reviews the historical development of the field of nonlinear optics, starting from its inception in 1961. It then reviews some of its more recent developments, including especially how nonlinear optics has become a crucial tool for the developing field of quantum technologies. Fundamental quantum processes enabled by nonlinear optics, such as the creation of squeezed and entangled light states, are reviewed. We then illustrate these concepts by means of specific applications, such as the development of secure communication systems based on the quantum states of light.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116220462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chee-Wei Lee, D. Ng, M. Ren, Y. Fu, Anthony Yew Seng Kay, V. Krishnamurthy, Jing Pu, Ai Ling Tan, F. Tjiptoharsono, Soo Bin Choo, Qian Wang
We demonstrate electrically-pumped III-V quantum-well lasers bonded on SiO2 with a metal-coated etched-mirror. The metal-coated etched-mirror allow the lasers to be used as on-chip laser, but our process design make sure that it requires no additional fabrication step to fabricate the metal-coated etched mirror. The bonded III-V on SiO2 also permits tight laser mode confinement in the active region due to high index contrast between III-V and SiO2. Moreover, it promises a flexible choice of host substrate, in which the silicon substrate could also be replaced with other materials. The laser devices demonstrated have the lowest threshold of 50 mA, a maximum output power of 9 mW and a differential quantum efficiency of 27.6%.
{"title":"Generic heterogeneously integrated III-V lasers-on-chip with metal-coated etched-mirror","authors":"Chee-Wei Lee, D. Ng, M. Ren, Y. Fu, Anthony Yew Seng Kay, V. Krishnamurthy, Jing Pu, Ai Ling Tan, F. Tjiptoharsono, Soo Bin Choo, Qian Wang","doi":"10.1117/12.2218395","DOIUrl":"https://doi.org/10.1117/12.2218395","url":null,"abstract":"We demonstrate electrically-pumped III-V quantum-well lasers bonded on SiO2 with a metal-coated etched-mirror. The metal-coated etched-mirror allow the lasers to be used as on-chip laser, but our process design make sure that it requires no additional fabrication step to fabricate the metal-coated etched mirror. The bonded III-V on SiO2 also permits tight laser mode confinement in the active region due to high index contrast between III-V and SiO2. Moreover, it promises a flexible choice of host substrate, in which the silicon substrate could also be replaced with other materials. The laser devices demonstrated have the lowest threshold of 50 mA, a maximum output power of 9 mW and a differential quantum efficiency of 27.6%.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133509103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zeyu Pan, H. Subbaraman, Cheng Zhang, Qiaochu Li, Xiaochuan Xu, Xiangning Chen, Xingyu Zhang, Yi Zou, Ashwin Panday, L. Guo, Ray T. Chen
Phased-array antenna (PAA) technology plays a significant role in modern day radar and communication networks. Truetime- delay (TTD) enabled beam steering networks provide several advantages over their electronic counterparts, including squint-free beam steering, low RF loss, immunity to electromagnetic interference (EMI), and large bandwidth control of PAAs. Chip-scale and integrated TTD modules promise a miniaturized, light-weight system; however, the modules are still rigid and they require complex packaging solutions. Moreover, the total achievable time delay is still restricted by the wafer size. In this work, we propose a light-weight and large-area, true-time-delay beamforming network that can be fabricated on light-weight and flexible/rigid surfaces utilizing low-cost “printing” techniques. In order to prove the feasibility of the approach, a 2-bit thermo-optic polymer TTD network is developed using a combination of imprinting and ink-jet printing. RF beam steering of a 1×4 X-band PAA up to 60° is demonstrated. The development of such active components on large area, light-weight, and low-cost substrates promises significant improvement in size, weight, and power (SWaP) requirements over the state-of-the-art.
{"title":"RF beam transmission of x-band PAA system utilizing large-area, polymer-based true-time-delay module developed using imprinting and inkjet printing","authors":"Zeyu Pan, H. Subbaraman, Cheng Zhang, Qiaochu Li, Xiaochuan Xu, Xiangning Chen, Xingyu Zhang, Yi Zou, Ashwin Panday, L. Guo, Ray T. Chen","doi":"10.1117/12.2213809","DOIUrl":"https://doi.org/10.1117/12.2213809","url":null,"abstract":"Phased-array antenna (PAA) technology plays a significant role in modern day radar and communication networks. Truetime- delay (TTD) enabled beam steering networks provide several advantages over their electronic counterparts, including squint-free beam steering, low RF loss, immunity to electromagnetic interference (EMI), and large bandwidth control of PAAs. Chip-scale and integrated TTD modules promise a miniaturized, light-weight system; however, the modules are still rigid and they require complex packaging solutions. Moreover, the total achievable time delay is still restricted by the wafer size. In this work, we propose a light-weight and large-area, true-time-delay beamforming network that can be fabricated on light-weight and flexible/rigid surfaces utilizing low-cost “printing” techniques. In order to prove the feasibility of the approach, a 2-bit thermo-optic polymer TTD network is developed using a combination of imprinting and ink-jet printing. RF beam steering of a 1×4 X-band PAA up to 60° is demonstrated. The development of such active components on large area, light-weight, and low-cost substrates promises significant improvement in size, weight, and power (SWaP) requirements over the state-of-the-art.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130175406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. S. Kong, Ji Su Kim, Sang-Pil Han, Namje Kim, K. Moon, K. Park, M. Jeon
We successfully demonstrate a THz generation using an ytterbium (Yb)-doped mode-locked femtosecond fiber laser and a home-made low-temperature grown (LTG) InGaAs Photoconductive antenna (PCA) module for THz Time-domain spectroscopy (TDS) systems. The Yb-doped fiber ring laser consists of a pump laser diode (PLD), a wavelength division multiplexer (WDM) coupler, a single-mode fiber (SMF), a 25 cm-long highly Yb-doped fiber, two collimators, two quarter wave plates (QWPs), a half-wave plate (HWP), a 10 nm broadband band pass filter, an isolator, and a polarizing beam splitter (PBS). In order to achieve the passively mode-locked optical short pulse, the nonlinear polarization rotation (NPR) effect is used. The achieved center wavelength and the 3 dB bandwidth of the modelocked fiber laser are 1.03 μm and ~ 15.6 nm, respectively. It has 175 fs duration after pulse compression with 66.2 MHz repetition rate. The average output power of mode-locked laser has more than 275 mW. The LTG-InGaAs PCA modules are used as the emitter and receiver in order to achieve the THz radiation. The PCA modules comprise a hyper-hemispherical Si lens and a log-spiral antenna-integrated LTG-InGaAs PCA chip electronically contacted on a printed circuit board (PCB). An excitation optical average pumping and probing power were ~ 6.3 mW and 5 mW, respectively. The free-space distance between the emitter and the receiver in the THz-TDS system was 70 mm. The spectrum of the THz radiation is achieved higher than 1.5 THz.
{"title":"Terahertz generation and detection using femtosecond mode-locked Yb-doped fiber laser","authors":"M. S. Kong, Ji Su Kim, Sang-Pil Han, Namje Kim, K. Moon, K. Park, M. Jeon","doi":"10.1117/12.2212114","DOIUrl":"https://doi.org/10.1117/12.2212114","url":null,"abstract":"We successfully demonstrate a THz generation using an ytterbium (Yb)-doped mode-locked femtosecond fiber laser and a home-made low-temperature grown (LTG) InGaAs Photoconductive antenna (PCA) module for THz Time-domain spectroscopy (TDS) systems. The Yb-doped fiber ring laser consists of a pump laser diode (PLD), a wavelength division multiplexer (WDM) coupler, a single-mode fiber (SMF), a 25 cm-long highly Yb-doped fiber, two collimators, two quarter wave plates (QWPs), a half-wave plate (HWP), a 10 nm broadband band pass filter, an isolator, and a polarizing beam splitter (PBS). In order to achieve the passively mode-locked optical short pulse, the nonlinear polarization rotation (NPR) effect is used. The achieved center wavelength and the 3 dB bandwidth of the modelocked fiber laser are 1.03 μm and ~ 15.6 nm, respectively. It has 175 fs duration after pulse compression with 66.2 MHz repetition rate. The average output power of mode-locked laser has more than 275 mW. The LTG-InGaAs PCA modules are used as the emitter and receiver in order to achieve the THz radiation. The PCA modules comprise a hyper-hemispherical Si lens and a log-spiral antenna-integrated LTG-InGaAs PCA chip electronically contacted on a printed circuit board (PCB). An excitation optical average pumping and probing power were ~ 6.3 mW and 5 mW, respectively. The free-space distance between the emitter and the receiver in the THz-TDS system was 70 mm. The spectrum of the THz radiation is achieved higher than 1.5 THz.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122239546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chi-Jui Chung, H. Subbaraman, Xingyu Zhang, Hai Yan, Jingdong Luo, A. Jen, R. Nelson, C. Lee, Ray T. Chen
A low loss and high sensitivity X-band RF sensor based on electro-optic (EO) polymer filled silicon slot photonic crystal waveguides (PCW) and bowtie antenna is proposed. By taking advantage of the slow light enhancementt in the PCW(>20X), large EO coefficient of the EO polymer(r33>200pm/V), as well as significant electric field enhancement of bowtie antenna on silicon dioxide substrate(>10000X), we can realize a large in-device EO coefficient over 1000pm/V so as to realize a high performance RF wave sensor. In addition, on-chip Mach-Zender interferometer (MZI) layout working under push-pull configuration is adopted to further increase the sensitivity of the sensor. Furthermore, inverse taper couplers and slotted photonic crystal waveguides are carefully designed and discussed in this paper to reduce the insertion loss of the device so as to increase the device signal-to-noise ratio. The minimum detectable electromagnetic power density is pushed down to 2.05 mW/m2, corresponding to a minimum sensing electric field of 0.61 V/m. This photonic RF sensor has several important advantages over conventional electronics RF sensors based on electrical scheme including high data throughput, compact in size, and great immunity to electromagnetic interference (EMI).
{"title":"Towards a fully packaged high-performance RF sensor featuring slotted photonic crystal waveguides","authors":"Chi-Jui Chung, H. Subbaraman, Xingyu Zhang, Hai Yan, Jingdong Luo, A. Jen, R. Nelson, C. Lee, Ray T. Chen","doi":"10.1117/12.2213557","DOIUrl":"https://doi.org/10.1117/12.2213557","url":null,"abstract":"A low loss and high sensitivity X-band RF sensor based on electro-optic (EO) polymer filled silicon slot photonic crystal waveguides (PCW) and bowtie antenna is proposed. By taking advantage of the slow light enhancementt in the PCW(>20X), large EO coefficient of the EO polymer(r33>200pm/V), as well as significant electric field enhancement of bowtie antenna on silicon dioxide substrate(>10000X), we can realize a large in-device EO coefficient over 1000pm/V so as to realize a high performance RF wave sensor. In addition, on-chip Mach-Zender interferometer (MZI) layout working under push-pull configuration is adopted to further increase the sensitivity of the sensor. Furthermore, inverse taper couplers and slotted photonic crystal waveguides are carefully designed and discussed in this paper to reduce the insertion loss of the device so as to increase the device signal-to-noise ratio. The minimum detectable electromagnetic power density is pushed down to 2.05 mW/m2, corresponding to a minimum sensing electric field of 0.61 V/m. This photonic RF sensor has several important advantages over conventional electronics RF sensors based on electrical scheme including high data throughput, compact in size, and great immunity to electromagnetic interference (EMI).","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124373201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Terahertz (THz) imaging is emerging as a robust platform for a myriad of applications in the fields of security, health, astronomy and material science. The terahertz regime with wavelengths spanning from microns to millimeters is a potentially safe and noninvasive medical imaging modality for detecting cancers. Endoscopic imaging systems provide high flexibility in examining the interior surfaces of an organ or tissue. Researchers have been working on the development of THz endoscopes with photoconductive antennas, which necessarily operate under high voltage, and require at least two channels to measure the reflected signal from the specimen. This manuscript provides the design and imperative steps involved in the development of a single-channel terahertz endoscopic system. The continuous-wave terahertz imaging system utilizes a single flexible terahertz waveguide channel to transmit and collect the back reflected intrinsic terahertz signal from the sample and is capable of operation in both transmission and reflection modalities. To determine the feasibility of using a terahertz endoscope for cancer detection, the co- and cross-polarized terahertz remittance from human colonic tissue specimens were collected at 584 GHz frequency. The two dimensional terahertz images obtained using polarization specific detection exhibited intrinsic contrast between cancerous and normal regions of fresh colorectal tissue. The level of contrast observed using endoscopic imaging correlates well with the contrast levels observed in the free space ex vivo terahertz reflectance studies of human colonic tissue. The prototype device developed in this study represents a significant step towards clinical endoscopic application of THz technology for in vivo colon cancer screening.
{"title":"Development of terahertz endoscopic system for cancer detection","authors":"P. Doradla, K. Alavi, C. Joseph, R. Giles","doi":"10.1117/12.2209404","DOIUrl":"https://doi.org/10.1117/12.2209404","url":null,"abstract":"Terahertz (THz) imaging is emerging as a robust platform for a myriad of applications in the fields of security, health, astronomy and material science. The terahertz regime with wavelengths spanning from microns to millimeters is a potentially safe and noninvasive medical imaging modality for detecting cancers. Endoscopic imaging systems provide high flexibility in examining the interior surfaces of an organ or tissue. Researchers have been working on the development of THz endoscopes with photoconductive antennas, which necessarily operate under high voltage, and require at least two channels to measure the reflected signal from the specimen. This manuscript provides the design and imperative steps involved in the development of a single-channel terahertz endoscopic system. The continuous-wave terahertz imaging system utilizes a single flexible terahertz waveguide channel to transmit and collect the back reflected intrinsic terahertz signal from the sample and is capable of operation in both transmission and reflection modalities. To determine the feasibility of using a terahertz endoscope for cancer detection, the co- and cross-polarized terahertz remittance from human colonic tissue specimens were collected at 584 GHz frequency. The two dimensional terahertz images obtained using polarization specific detection exhibited intrinsic contrast between cancerous and normal regions of fresh colorectal tissue. The level of contrast observed using endoscopic imaging correlates well with the contrast levels observed in the free space ex vivo terahertz reflectance studies of human colonic tissue. The prototype device developed in this study represents a significant step towards clinical endoscopic application of THz technology for in vivo colon cancer screening.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133173338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Driven by the requirements in synchrotron radiation applications, astronomical observation, and dense plasma diagnostics, the EUV, soft X-rays and X-rays multilayer optics have been tremendously developed. Based on the LAMP project for soft X-ray polarimetry, Co/C and Cr/C multilayers have been fabricated and characterized. Both Co/C and Cr/C multilayers reveal good optical performance working at 250 eV. Pd/Y multilayers have been successfully fabricated using reactive sputtering with nitrogen working at around 9.4 nm. EUV normal incidence Schwarzschild and soft X-ray grazing incidence KB microscopes were developed for ICF plasma diagnostics. This paper covers the outline of the multilayer optics and the current status in our lab.
{"title":"Multilayers for EUV, soft x-ray and x-ray optics","authors":"Zhanshan Wang, Qiushi Huang, Zhong Zhang","doi":"10.1117/12.2218081","DOIUrl":"https://doi.org/10.1117/12.2218081","url":null,"abstract":"Driven by the requirements in synchrotron radiation applications, astronomical observation, and dense plasma diagnostics, the EUV, soft X-rays and X-rays multilayer optics have been tremendously developed. Based on the LAMP project for soft X-ray polarimetry, Co/C and Cr/C multilayers have been fabricated and characterized. Both Co/C and Cr/C multilayers reveal good optical performance working at 250 eV. Pd/Y multilayers have been successfully fabricated using reactive sputtering with nitrogen working at around 9.4 nm. EUV normal incidence Schwarzschild and soft X-ray grazing incidence KB microscopes were developed for ICF plasma diagnostics. This paper covers the outline of the multilayer optics and the current status in our lab.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115070754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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