R. Lai, X. Mei, S. Sarkozy, W. Yoshida, P. Liu, J. Lee, M. Lange, V. Radisic, K. Leong, W. Deal
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引用次数: 15
Abstract
In this paper, we report recent advances on sub-50 nm InP HEMT have achieved new benchmarks of 586 GHz fT and 7 dB amplifier circuit gain at 390 GHz
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