R. Thewes, G. Enders, F. Hofmann, W. Hoenlein, J. Vollrath, R. Ferrant, P. Flatresse, B. Pelloux-Prayer, F. Allain, G. Reimbold, C. Mazure
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引用次数: 1
Abstract
The fluctuations of linear and saturation mode threshold voltage of FDSOI transistors are strongly correlated. They show negligible dependence on the backgate voltage even under large backgate biasing variations. Drain current variation is also highly correlated with the threshold voltage. A calculated matching constant normalized to oxide thickness reveals excellent values of around 1 mV μm / nm.
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