Power devices for grid connections

L. Casey, L. Zubieta, J. Mossoba, B. Borowy, B. Semenov
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引用次数: 4

Abstract

Power electronic interfaces are vital to advanced, smarter, distributed grids and micro-grids and the capabilities and limitations of power devices are integral to this. This paper discusses existing and emerging applications of grid connected electronic interfaces that are enabled by Power Semiconductor Devices. The application focus will be on: (1) inverters, which are a key element of modern distributed and renewable energy systems; (2) solid-state transformers which hold great promise to reduce size and weight, while enhancing performance, compared to existing Grid transformers; (3) MV static transfer switches, which facilitate redundant power at the medium voltage level. Capabilities and tradeoffs between Power circuit topologies, available devices, and circuit techniques are presented. Existing and projected market opportunities are also presented, and motivation for future device development is outlined. Emerging transformative research using wide band gap devices in silicon-dominated power device applications, along with hybrid power switch configurations, will also be highlighted. The compelling requirement of advanced grids for both fast fault current limiting, fast voltage control, and possibly increased overload capability to enable the much heralded advances, are also shown to be completely dependent on devices, along with their cost effective application.
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电网连接用动力装置
电力电子接口对于先进、智能、分布式电网和微电网至关重要,电力设备的能力和限制是不可或缺的。本文讨论了由功率半导体器件实现的电网连接电子接口的现有和新兴应用。应用重点将集中在:(1)逆变器,这是现代分布式和可再生能源系统的关键要素;(2)固态变压器,与现有的电网变压器相比,它在减小尺寸和重量的同时提高了性能;(3) MV静态转换开关,便于中压级冗余供电。介绍了功率电路拓扑、可用器件和电路技术之间的能力和权衡。现有的和预计的市场机会也提出,并为未来的设备发展动机概述。在硅主导的功率器件应用中使用宽带隙器件的新兴变革性研究,以及混合功率开关配置,也将得到强调。先进电网对快速故障限流、快速电压控制和可能增加的过载能力的迫切需求,也被证明完全依赖于设备,以及它们的成本效益应用。
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Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si structures Advanced 0.13um smart power technology from 7V to 70V Failure mechanisms of low-voltage trench power MOSFETs under repetitive avalanche conditions Destruction behavior of power diodes beyond the SOA limit Clamped inductive turn-off failure in high-voltage NPT-IGBTs under overloading conditions
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