A. Babiński, R. Kulawinski, T. Tomaszewicz, J. Baranowski
{"title":"Optical determination of /spl delta/-doping concentration in semiconductor structures","authors":"A. Babiński, R. Kulawinski, T. Tomaszewicz, J. Baranowski","doi":"10.1109/ASDAM.2000.889477","DOIUrl":null,"url":null,"abstract":"The electroreflectance measurements on modulation Si /spl delta/-doped pseudomorphic GaAs/InGaAs/GaAs quantum well at room temperature are presented. Previously proposed Electroreflectance Bias-Wavelength mapping is used for characterisation of investigated structure. The Fourier transform applied to Franz-Keldysh oscillations revealed the value of electric field in the structure. A difference between an electric field above and below the /spl delta/-doping plane was used to find the ionized dopant concentration. The position of the /spl delta/-layer was also obtained from our analysis.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889477","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The electroreflectance measurements on modulation Si /spl delta/-doped pseudomorphic GaAs/InGaAs/GaAs quantum well at room temperature are presented. Previously proposed Electroreflectance Bias-Wavelength mapping is used for characterisation of investigated structure. The Fourier transform applied to Franz-Keldysh oscillations revealed the value of electric field in the structure. A difference between an electric field above and below the /spl delta/-doping plane was used to find the ionized dopant concentration. The position of the /spl delta/-layer was also obtained from our analysis.
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