Reduction of 1/f PM noise in BJT amplifiers with emitter feedback using compensation effects

Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218) Pub Date : 2001-06-06 DOI:10.1109/FREQ.2001.956184

T. I. Boldyreva

{"title":"Reduction of 1/f PM noise in BJT amplifiers with emitter feedback using compensation effects","authors":"T. I. Boldyreva","doi":"10.1109/FREQ.2001.956184","DOIUrl":null,"url":null,"abstract":"Investigation of 1/f PM and AM noise in bipolar junction transistor (BJT) amplifiers has shown that there are some opportunities to reduce 1/f PM noise in amplifiers using complex emitter feedback. But there was no systematic investigation of opportunities and limitations of this method of 1/f PM noise reduction. The aim of this paper is to present results of such an investigation. To solve the problem, a more general model of 1/f noise generation in BJT was used. Fluctuations both in recombination conductivity and base charging capacitance are taken into consideration. Two cases of compensation are considered. In the case of \"wideband\" compensation there is a wide frequency band where the reduction doesn't depend on the signal frequency /spl omega//sub s/. In the case of \"narrowband\" compensation there is a deep notch in dependence of 1/f PM noise power spectral density at each fixed Fourier frequency on /spl omega//sub s/. Limitations on the highest possible /spl omega//sub s/ at which compensation effect can be obtained are considered.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.2001.956184","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

Abstract

Investigation of 1/f PM and AM noise in bipolar junction transistor (BJT) amplifiers has shown that there are some opportunities to reduce 1/f PM noise in amplifiers using complex emitter feedback. But there was no systematic investigation of opportunities and limitations of this method of 1/f PM noise reduction. The aim of this paper is to present results of such an investigation. To solve the problem, a more general model of 1/f noise generation in BJT was used. Fluctuations both in recombination conductivity and base charging capacitance are taken into consideration. Two cases of compensation are considered. In the case of "wideband" compensation there is a wide frequency band where the reduction doesn't depend on the signal frequency /spl omega//sub s/. In the case of "narrowband" compensation there is a deep notch in dependence of 1/f PM noise power spectral density at each fixed Fourier frequency on /spl omega//sub s/. Limitations on the highest possible /spl omega//sub s/ at which compensation effect can be obtained are considered.

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利用补偿效应降低发射极反馈的BJT放大器中1/f PM噪声

对双极结晶体管(BJT)放大器中1/f PM和AM噪声的研究表明，使用复杂发射极反馈可以降低放大器中的1/f PM噪声。但目前还没有对这种1/f PM降噪方法的机会和局限性进行系统的研究。本文的目的是提出这样一项调查的结果。为了解决这一问题，采用了一种更通用的BJT中1/f噪声产生模型。考虑了复合电导率和基极充电电容的波动。考虑了两种赔偿情况。在“宽带”补偿的情况下，有一个宽的频带，其中减少不依赖于信号频率/spl ω //sub s/。在“窄带”补偿的情况下，在每个固定傅立叶频率/spl ω //sub s/上，1/f PM噪声功率谱密度的依赖性有一个深陷波。考虑了获得补偿效应的最高可能/spl ω //sub s/的限制。

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Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)

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