Theoretical and experimental comparison of optimized doping profiles for high-performance InP Gunn devices at 220-500 GHz

Abstract

Different types of doping profiles are investigated theoretically and experimentally for their potential of improving the performance of InP Gunn devices at J-band (220-325 GHz) frequencies and above. As initial experimental results, devices with an optimized graded doping profile generated output power levels approximately twice the previous state-of-the-art values at 280-300 GHz. Simulations identified a fiat doping profile with a notch at the cathode as even more promising. For example, an RF output power of 50 mW at 240 GHz is predicted for this profile compared to 42 mW at 240 GHz from an optimized graded doping profile.