A Memory Failure Pattern Analyzer for memory diagnosis and repair

Bing-Yang Lin, Mincent Lee, Cheng-Wen Wu
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引用次数: 9

Abstract

As VLSI technology advances and memories occupy more and more area in a typical SOC, memory diagnosis has become an important issue. In this paper, we propose the Memory Failure Pattern Analyzer (MFPA), which is developed for different memories and technologies that are currently used in the industry. The MFPA can locate weak regions of the memory array, i.e., those with high failure rate. It can also be used to analyze faulty-cell/defect distributions automatically. We also propose a new defect distribution model which has 1-12 times higher accuracy than other theoretical models. Based on this model, we propose a defect-spectrum-based methodology to identify critical failure patterns from failure bitmaps. These failure patterns can further be translated to corresponding defects by our memory fault simulator (RAMSES) and physical-level failure analysis tool (FAME). In an industrial case, the MFPA fits the defect distribution with the proposed model, which has 12 times higher accuracy than the Poisson distribution. With our model, it further identifies two special failure patterns from 132,488 faulty 4-Mb macros in 1.2 minutes.
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用于记忆诊断和修复的记忆故障模式分析器
随着超大规模集成电路技术的进步,存储器在典型SOC中所占的比重越来越大,存储器诊断已成为一个重要的问题。在本文中,我们提出了记忆失效模式分析仪(MFPA),它是针对目前工业上使用的不同存储器和技术而开发的。MFPA可以定位存储阵列的薄弱区域,即故障率高的区域。它还可以用于自动分析缺陷单元/缺陷分布。我们还提出了一种新的缺陷分布模型,其精度比其他理论模型高1-12倍。基于此模型,我们提出了一种基于缺陷谱的方法来从故障位图中识别关键故障模式。这些故障模式可以通过我们的内存故障模拟器(RAMSES)和物理级故障分析工具(FAME)进一步转化为相应的缺陷。在一个工业案例中,MFPA与所提出的模型拟合缺陷分布,其精度比泊松分布高12倍。使用我们的模型,它可以在1.2分钟内从132,488个错误的4 mb宏中进一步识别出两种特殊的故障模式。
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