Jun-ichi Suzuki, S. Inoue, Shovon M. D. Tanvir Hasan, Y. Hayashi, T. Amemiya, N. Nishiyama, S. Arai
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引用次数: 0
Abstract
We realized GaInAsP/SOI hybrid Fabry-Pérot (FP) laser with AlInAs-oxide current confinement structure for PICs on a silicon platform. Using hybrid wafers by a plasma activated bonding technique, an AlInAs layer just above GaInAsP quantum wells was oxidized by wet oxidation. A threshold current of 50 mA and an external differential quantum efficiency of 11%/facet were obtained with the unoxidezed stripe width of 4.5 μm and the cavity length of 500 μm.
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