{"title":"Highly sensitive RF energy harvester using gate and bulk self compensation techniques","authors":"Hugo B. Goncalves, Jorge R. Fernandes","doi":"10.1109/DCIS.2015.7388568","DOIUrl":null,"url":null,"abstract":"This paper presents a highly sensitive RF energy harvester. The developed prototype is based on an improved rectifier, that makes use of passive self compensation and biasing techniques to increase the sensitivity and efficiency of the device. These techniques include gate compensation and bulk DC biasing to lower the rectifier transistors threshold voltage. The rectifier exhibits a very high sensitivity of 84 mV at 1 V / 1 μW output voltage and power.","PeriodicalId":191482,"journal":{"name":"2015 Conference on Design of Circuits and Integrated Systems (DCIS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Conference on Design of Circuits and Integrated Systems (DCIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DCIS.2015.7388568","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents a highly sensitive RF energy harvester. The developed prototype is based on an improved rectifier, that makes use of passive self compensation and biasing techniques to increase the sensitivity and efficiency of the device. These techniques include gate compensation and bulk DC biasing to lower the rectifier transistors threshold voltage. The rectifier exhibits a very high sensitivity of 84 mV at 1 V / 1 μW output voltage and power.
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