Chao-Min Chang, Shu-Han Chen, Sheng-Yu Wang, J. Chyi
{"title":"Characterization of InAlAs/In0.25Ga0.75As0.72Sb0.28/InGaAs double heterojunction bipolar transistors","authors":"Chao-Min Chang, Shu-Han Chen, Sheng-Yu Wang, J. Chyi","doi":"10.1109/ICIPRM.2010.5516128","DOIUrl":null,"url":null,"abstract":"We report on the characterization of InP-based heterojunction bipolar transistors (HBTs) with low turn-on voltage and high current gain by using InGaAsSb as the base layer. The low turn-on voltage of 0.43 V is attributed to the smaller band gap of the In<inf>0.25</inf>Ga<inf>0.75</inf>As<inf>072</inf>Sb<inf>0.28</inf> material. High current gain of 74 is observed despite a heavily Be-doped (9.0×10<sup>19</sup> cm<sup>−3</sup>) base is used, suggesting a long minority carrier lifetime (τ<inf>n</inf>) in the InGaAsSb material. Moreover, low specific contact resistivity of 5×10<sup>−8</sup> Ω-cm<sup>2</sup> is also demonstrated on separate In<inf>0.25</inf>Ga<inf>0.75</inf>As<inf>072</inf>Sb<inf>0.28</inf> samples.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516128","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We report on the characterization of InP-based heterojunction bipolar transistors (HBTs) with low turn-on voltage and high current gain by using InGaAsSb as the base layer. The low turn-on voltage of 0.43 V is attributed to the smaller band gap of the In0.25Ga0.75As072Sb0.28 material. High current gain of 74 is observed despite a heavily Be-doped (9.0×1019 cm−3) base is used, suggesting a long minority carrier lifetime (τn) in the InGaAsSb material. Moreover, low specific contact resistivity of 5×10−8 Ω-cm2 is also demonstrated on separate In0.25Ga0.75As072Sb0.28 samples.
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