Static random access memories based on resonant interband tunneling diodes in the InAs/GaSb/AlSb material system

Abstract

We have fabricated SRAM's based on resonant interband tunneling diodes in the InAs/AlSb/GaSb material sys- tem. The bistability and the switching principles are demon- strated. Numerical simulations of the memory characteristics of the SRAM cell are performed and used for comparing with experiments. Several key issues involving the applications of the device are also discussed. (a) (b) Fig. 1. The equivalent circuit and layer structure of the RITD-based SRAM's. The cell is selected when a differential voltage between VD and V,, are. applied. The structure is based on the InAs/AlSb/GaSb material system. (a) A scheme that uses a tunneling diode connected to the middle node. (b) The cross section of an SRAM cell.