{"title":"A DDS-oriented phase-to-amplitude converter using a SiGe:C bipolar transistors differential pair","authors":"S. Thuries, É. Tournier","doi":"10.1109/RFIT.2005.1598913","DOIUrl":null,"url":null,"abstract":"A phase-to-amplitude converter using a bipolar transistor differential pair with an 8-bits digital-to-analog converter is reported. This technique provides significant saving in power consumption and die size due to the elimination of the ROM and/or complex compute circuit. It renders the design of direct digital synthesizer usable for microwave wireless systems. The circuit has been processed in 0.25 /spl mu/ BiCMOS SiGe: C technology. The measured rejection for the first and the second harmonic is respectively -37 dBc and -63 dBc. The 8-bits D/A converter integral non-linearity and differential non-linearity errors are under 1 LSB. The circuit power consumption is 115 mW and operates from a single 2.7 V supply.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2005.1598913","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
A phase-to-amplitude converter using a bipolar transistor differential pair with an 8-bits digital-to-analog converter is reported. This technique provides significant saving in power consumption and die size due to the elimination of the ROM and/or complex compute circuit. It renders the design of direct digital synthesizer usable for microwave wireless systems. The circuit has been processed in 0.25 /spl mu/ BiCMOS SiGe: C technology. The measured rejection for the first and the second harmonic is respectively -37 dBc and -63 dBc. The 8-bits D/A converter integral non-linearity and differential non-linearity errors are under 1 LSB. The circuit power consumption is 115 mW and operates from a single 2.7 V supply.
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