Device options for high-voltage SiC power switching devices

Abstract

Silicon carbide power switching devices have made remarkable progress in the past decade. As blocking voltage increases, the resistance of power switches becomes dominated by the drift region, and the advantage of SiC over silicon increases. This is illustrated by the degree to which SiC unipolar devices are approaching their theoretical limits at blocking voltages around 10 kV. Efforts are currently underway to develop power switching devices for the 15-25 kV regime