Sub- THz Switch-less Reconfigurable Triple-/Push-push Dual-band VCO for 6G Communication

Seongwoog Oh, Jinhyun Kim, Jungsuek Oh
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引用次数: 2

Abstract

This work presents a novel switch-less reconfigurable triple-/push-push dual-band VCO topology and design methods for a W-band metal-oxide-semiconductor (CMOS) voltage-controlled oscillator (VCO). A clover-shaped inductor with a three-port connection and single frequency multiplied output port configuration provides switch-less mode changes between triple-push and push-push operation. This topology is demonstrated in a W-band VCO by controlling three cores with a measured phase noise of −109.17 dBc/Hz at a 10-MHz offset of a 105.3 GHz carrier. The measured center frequency of each band is 91.04 GHz and 102.33 GHz with a tuning range of 10.4% and 14.1 %, respectively. The proposed VCO with independent core on/off state control enables low parasitic switch-less frequency band shift resulting in a superior tuning range compared to those of conventional dual-/single-band VCOs. The effectiveness of this approach is demonstrated through fabrication in a 28-nm CMOS process, with the best FOMT being −174.4 dBc/Hz in this case.
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用于6G通信的亚太赫兹无开关可重构三/推-推双频压控振荡器
本文提出了一种新的无开关可重构的三/推-推双带VCO拓扑结构,以及用于w波段金属氧化物半导体(CMOS)压控振荡器(VCO)的设计方法。三叶草型电感具有三端口连接和单频倍增输出端口配置,在三推和推推操作之间提供无开关模式变化。在105.3 GHz载波的10mhz偏置下,该拓扑通过控制三个内核来演示w波段VCO,测量相位噪声为- 109.17 dBc/Hz。测得各频段中心频率分别为91.04 GHz和102.33 GHz,调谐范围分别为10.4%和14.1%。与传统的双/单频段VCO相比,该VCO具有独立的核心开/关状态控制,可实现低寄生无开关频带移位,从而具有优越的调谐范围。该方法的有效性通过在28纳米CMOS工艺中制造来证明,在这种情况下,最佳fmt为- 174.4 dBc/Hz。
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