Electrical measurement and analysis of TSV/RDL for 3D integration

Xin Sun, R. Fang, Yunhui Zhu, Xiao Zhong, Yuan Bian, Shengli Ma, M. Miao, J. Chen, Yan Wang, Yufeng Jin
{"title":"Electrical measurement and analysis of TSV/RDL for 3D integration","authors":"Xin Sun, R. Fang, Yunhui Zhu, Xiao Zhong, Yuan Bian, Shengli Ma, M. Miao, J. Chen, Yan Wang, Yufeng Jin","doi":"10.1109/EPTC.2014.7028399","DOIUrl":null,"url":null,"abstract":"In this paper, electrical measurement and analysis of TSV/RDL is carried out, to evaluate the fabrication process and get a comprehensive understanding of electrical properties of TSV/RDL interconnect structures. DC resistance, leakage current and high frequency characterization are implemented. TSV shows a spreading distribution of DC resistance, with minimum of 4.3 mΩ. Leakage current of TSV reaches 150nA up to 30V without breakdown. Low substrate resistivity lowers the high frequency performance of TSV.","PeriodicalId":115713,"journal":{"name":"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2014.7028399","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

In this paper, electrical measurement and analysis of TSV/RDL is carried out, to evaluate the fabrication process and get a comprehensive understanding of electrical properties of TSV/RDL interconnect structures. DC resistance, leakage current and high frequency characterization are implemented. TSV shows a spreading distribution of DC resistance, with minimum of 4.3 mΩ. Leakage current of TSV reaches 150nA up to 30V without breakdown. Low substrate resistivity lowers the high frequency performance of TSV.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
三维集成TSV/RDL的电测量与分析
本文对TSV/RDL进行了电学测量和分析,以评价TSV/RDL互连结构的制作工艺,全面了解TSV/RDL互连结构的电学性能。实现了直流电阻、漏电流和高频特性。TSV直流电阻呈扩张性分布,最小值为4.3 mΩ。TSV漏电流可达150nA至30V而不击穿。低衬底电阻率降低了TSV的高频性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Influence of the height of Carbon Nanotubes on hot switching of Au/Cr-Au/MWCNT contact pairs Laminating thin glass onto glass carrier to eliminate grinding and bonding process for glass interposer A robust chip capacitor for video band width in RF power amplifiers Chip scale package with low cost substrate evaluation and characterization Methodology for more accurate assessment of heat loss in microchannel flow boiling
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1