C. Sandow, R. Baburske, F. Niedernostheide, F. Pfirsch, C. Tochterle
{"title":"Exploring the limits of the safe operation area of power semiconductor devices","authors":"C. Sandow, R. Baburske, F. Niedernostheide, F. Pfirsch, C. Tochterle","doi":"10.1109/SISPAD.2014.6931560","DOIUrl":null,"url":null,"abstract":"TCAD simulations of power devices are an important tool to investigate destruction mechanisms of power diodes and IGBTs. It is found that the dynamics of filamentation is the key for understanding the limits of the safe operation area. For both diodes and IGBTs, destructive and non-destructive filamentation mechanisms are identified and the resulting destruction mechanisms are discussed.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2014.6931560","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
TCAD simulations of power devices are an important tool to investigate destruction mechanisms of power diodes and IGBTs. It is found that the dynamics of filamentation is the key for understanding the limits of the safe operation area. For both diodes and IGBTs, destructive and non-destructive filamentation mechanisms are identified and the resulting destruction mechanisms are discussed.