Three-dimensional atomic-scale investigation of defects in semiconductors by atom probe tomography

Abstract

In this chapter, the role of APT in the investigation of extended defects and solute segregation in semiconductors is discussed on the basis of several salient studies mainly carried out in our laboratory (Groupe de Physique des Materiaux) and dealing with one-dimensional (1D) (dislocations), two-dimensional (2D) (interfaces, SFs, GBs) and 3D defects (clusters, QDs). The principles of APT are first presented including a discussion of limitations in terms of spatial resolution and quantitativity. Results and performances are also compared to those of SIMS.