G. Wang, M. Feng, R. Kaliski, Y. P. Liaw, C. Lau, C. Ito
{"title":"Mixed technology of ion implantation and heteroepitaxy: ion-implanted In/sub x/Ga/sub 1-x/As/GaAs MESFETs","authors":"G. Wang, M. Feng, R. Kaliski, Y. P. Liaw, C. Lau, C. Ito","doi":"10.1109/CORNEL.1989.79826","DOIUrl":null,"url":null,"abstract":"State-of-the-art FET performance with f/sub t/'s of 55 and 61 GHz has been achieved using 0.5- mu m-gate In/sub 0.1/Ga/sub 0.9/As and graded In/sub x/Ga/sub 1-x/As MESFETs, respectively. The material growth and device fabrication are described, and the device characteristics are reported. In comparison to the In/sub 0.1/Ga/sub 0.9/As MESFET, the graded-material MESFET shows a better Schottky gate, which is essential for device performance. This novel InGaAs MESFET is of interest for InGaAs-based circuits that are suitable, among other applications, for long-wavelength fiber-optic communication.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"53 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1989.79826","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
State-of-the-art FET performance with f/sub t/'s of 55 and 61 GHz has been achieved using 0.5- mu m-gate In/sub 0.1/Ga/sub 0.9/As and graded In/sub x/Ga/sub 1-x/As MESFETs, respectively. The material growth and device fabrication are described, and the device characteristics are reported. In comparison to the In/sub 0.1/Ga/sub 0.9/As MESFET, the graded-material MESFET shows a better Schottky gate, which is essential for device performance. This novel InGaAs MESFET is of interest for InGaAs-based circuits that are suitable, among other applications, for long-wavelength fiber-optic communication.<>
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