25.3 A 1.3A gate driver for GaN with fully integrated gate charge buffer capacitor delivering 11nC enabled by high-voltage energy storing

Abstract

More and more power electronics applications utilize GaN transistors as they enable higher switching frequencies in comparison to conventional Si devices. Faster switching shrinks down the size of passives and enables compact solutions in applications like renewable energy, electrical cars and home appliances. GaN transistors benefit from ∼10× smaller gate charge QG and gate drive voltages in the range of typically 5V vs. ∼15V for Si.