Chris Park, A. Edwards, P. Rajagopal, W. Johnson, S. Singhal, A. Hanson, Quinn Martin, E. Piner, K. Linthicum, I. Kizilyalli
{"title":"High-Power and High-Voltage AlGaN/GaN HEMTs-on-Si","authors":"Chris Park, A. Edwards, P. Rajagopal, W. Johnson, S. Singhal, A. Hanson, Quinn Martin, E. Piner, K. Linthicum, I. Kizilyalli","doi":"10.1109/CSICS07.2007.11","DOIUrl":null,"url":null,"abstract":"GaN-on-Silicon technology is a highly manufacturable, reliable, and cost effective AlGaN/GaN HEMT platform. Maximum RF performance (power and efficiency) can be achieved by addressing two main areas related to the silicon substrate: the RF loss to the silicon substrate and the thermal resistance of the device to the heat sink. In this paper, we will report on how the two areas can be addressed in a realistic environment to enable high power, high voltage operation. This device technology can be used to develop high power amplifiers that are significantly smaller, lighter, and operate over a broad bandwidth.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS07.2007.11","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
GaN-on-Silicon technology is a highly manufacturable, reliable, and cost effective AlGaN/GaN HEMT platform. Maximum RF performance (power and efficiency) can be achieved by addressing two main areas related to the silicon substrate: the RF loss to the silicon substrate and the thermal resistance of the device to the heat sink. In this paper, we will report on how the two areas can be addressed in a realistic environment to enable high power, high voltage operation. This device technology can be used to develop high power amplifiers that are significantly smaller, lighter, and operate over a broad bandwidth.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
