E. Murakami, K. Umeda, T. Yamanaka, S. Kimura, H. Aono, K. Makabe, K. Okuyama, Y. Ohji, Y. Yoshida, M. Minami, K. Kuroda, S. Ikeda, K. Kubota
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引用次数: 1
Abstract
The hot-carrier (HC) reliability of low-standby-power 0.1 /spl mu/m n-MOSFETs is investigated, and design guidelines for channel and halo profiles are described. The heavy channel-doping needed to obtain high V/sub th/ enhances HC-injection efficiency, and heavy halo-doping dramatically reduces the lifetime when using substrate-bias (V/sub bb/). Shallow-channel and tilted-halo doping is optimal to keep the HC-generation site away from the SiO/sub 2/-Si interface and to minimize the vertical electric field that is responsible for secondary impact ionization.
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