{"title":"An 8b 100MS/s flash ADC","authors":"Y. Yoshii, K. Asano, M. Nakamura, C. Yamada","doi":"10.1109/ISSCC.1984.1156644","DOIUrl":null,"url":null,"abstract":"This paper will describe an 8b flash ADC which achieves a conversion rate of 100MHz arid an input bandwidth of 30MHz at a power dissipation of 1200mW. The circuit is realized in an epitaxial-LOCOS process with a minimum line width of 2.5μm and a transistor fTof 4GHz at 45μA collector current.","PeriodicalId":260117,"journal":{"name":"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1984.1156644","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
This paper will describe an 8b flash ADC which achieves a conversion rate of 100MHz arid an input bandwidth of 30MHz at a power dissipation of 1200mW. The circuit is realized in an epitaxial-LOCOS process with a minimum line width of 2.5μm and a transistor fTof 4GHz at 45μA collector current.
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