K. Kawasaki, E. Kuwata, Hidenori Ishibashi, T. Yao, Kiyoshi Ishida, Kazuhiro Maeda, H. Shibata, M. Tsuru, K. Mori, M. Shimozawa, H. Fukumoto
{"title":"A S-band 3D Surface Mount Packaged SiGe and GaN Tx Module Using Flip-Chip Bonding and a Device Embedded PCB Substrate","authors":"K. Kawasaki, E. Kuwata, Hidenori Ishibashi, T. Yao, Kiyoshi Ishida, Kazuhiro Maeda, H. Shibata, M. Tsuru, K. Mori, M. Shimozawa, H. Fukumoto","doi":"10.23919/EUMIC.2018.8539907","DOIUrl":null,"url":null,"abstract":"This paper demonstrates a S-band 3D surface mount packaged Si and GaN Tx Module using flip-chip bonding and a chip embedded PCB Substrate. In order to integrate heterogeneous SiGe and GaN chips in a single package, 3D-structure is employed. The GaN chip is embedded in the PCB substrate and the SiGe chip is flip-chip bonded on the GaN embedded PCB Substrate. The Tx module includes a 5bit phase shifter, a 5bit VGA, a driver amplifier, and a power amplifier. The package size is occupying 7×7mm2• The developed Tx module achieves phase and amplitude error of less than 1.3 degrees-rms., and 0.36dB rms., and an output power of30dBm, respectively.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2018.8539907","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper demonstrates a S-band 3D surface mount packaged Si and GaN Tx Module using flip-chip bonding and a chip embedded PCB Substrate. In order to integrate heterogeneous SiGe and GaN chips in a single package, 3D-structure is employed. The GaN chip is embedded in the PCB substrate and the SiGe chip is flip-chip bonded on the GaN embedded PCB Substrate. The Tx module includes a 5bit phase shifter, a 5bit VGA, a driver amplifier, and a power amplifier. The package size is occupying 7×7mm2• The developed Tx module achieves phase and amplitude error of less than 1.3 degrees-rms., and 0.36dB rms., and an output power of30dBm, respectively.