A S-band 3D Surface Mount Packaged SiGe and GaN Tx Module Using Flip-Chip Bonding and a Device Embedded PCB Substrate

K. Kawasaki, E. Kuwata, Hidenori Ishibashi, T. Yao, Kiyoshi Ishida, Kazuhiro Maeda, H. Shibata, M. Tsuru, K. Mori, M. Shimozawa, H. Fukumoto
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引用次数: 1

Abstract

This paper demonstrates a S-band 3D surface mount packaged Si and GaN Tx Module using flip-chip bonding and a chip embedded PCB Substrate. In order to integrate heterogeneous SiGe and GaN chips in a single package, 3D-structure is employed. The GaN chip is embedded in the PCB substrate and the SiGe chip is flip-chip bonded on the GaN embedded PCB Substrate. The Tx module includes a 5bit phase shifter, a 5bit VGA, a driver amplifier, and a power amplifier. The package size is occupying 7×7mm2• The developed Tx module achieves phase and amplitude error of less than 1.3 degrees-rms., and 0.36dB rms., and an output power of30dBm, respectively.
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一种s波段3D表面贴装封装SiGe和GaN Tx模块,采用倒装键合和器件嵌入式PCB基板
本文演示了一种s波段3D表面贴装封装的Si和GaN Tx模块,该模块使用倒装键合和芯片嵌入PCB衬底。为了在单一封装中集成异构SiGe和GaN芯片,采用了3d结构。GaN芯片嵌入在PCB衬底中,SiGe芯片倒装在GaN嵌入的PCB衬底上。Tx模块包括一个5位移相器、一个5位VGA、一个驱动放大器和一个功率放大器。•开发的Tx模块相位和幅度误差小于1.3度-rms。, 0.36dB rms。输出功率分别为30dbm。
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