N. Toledo, S. C. Cruz, C. Neufeld, J. R. Lang, M. Scarpulla, T. Buehl, A. Gossard, S. Denbaars, J. Speck, U. Mishra
{"title":"Integrated non-III-nitride/III-nitride tandem solar cell","authors":"N. Toledo, S. C. Cruz, C. Neufeld, J. R. Lang, M. Scarpulla, T. Buehl, A. Gossard, S. Denbaars, J. Speck, U. Mishra","doi":"10.1109/DRC.2011.5994525","DOIUrl":null,"url":null,"abstract":"III-nitrides have recently been demonstrated as potential photovoltaic device material particularly in the high-energy portion of the solar spectrum [1–2]. The large lattice mismatch between InN and GaN however, makes it difficult to grow good quality high In-composition InGaN films for low bandgap subcells. The integration of III-N based solar cells, which have currently been demonstrated to work well above 2.0 eV, with mature IV and III–V based solar cell technologies, which work well at bandgaps ≤ 2.0 eV, has the potential to improve the efficiency of current multi-junction solar cells. In this paper, we present the first on-wafer integration of InGaN/GaN solar cells with non-III-nitride (GaAs) solar cells.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994525","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
III-nitrides have recently been demonstrated as potential photovoltaic device material particularly in the high-energy portion of the solar spectrum [1–2]. The large lattice mismatch between InN and GaN however, makes it difficult to grow good quality high In-composition InGaN films for low bandgap subcells. The integration of III-N based solar cells, which have currently been demonstrated to work well above 2.0 eV, with mature IV and III–V based solar cell technologies, which work well at bandgaps ≤ 2.0 eV, has the potential to improve the efficiency of current multi-junction solar cells. In this paper, we present the first on-wafer integration of InGaN/GaN solar cells with non-III-nitride (GaAs) solar cells.
iii -氮化物最近被证明是一种潜在的光伏器件材料,特别是在太阳光谱的高能部分[1-2]。然而,InN和GaN之间的大晶格不匹配使得难以在低带隙亚电池中生长出高质量的高成分InGaN薄膜。III-N基太阳能电池(目前已被证明能在2.0 eV以上工作)与成熟的IV和III-V基太阳能电池技术(能在≤2.0 eV的带隙下工作)的集成,有可能提高当前多结太阳能电池的效率。在本文中,我们首次提出了InGaN/GaN太阳能电池与非iii -氮化物(GaAs)太阳能电池的片上集成。