{"title":"2.5 kV 100 A /spl mu/-stack IGBT","authors":"Y. Takahashi, T. Koga, H. Kirihata, Y. Seki","doi":"10.1109/ISPSD.1994.583631","DOIUrl":null,"url":null,"abstract":"A 2.5 kV 100 A /spl mu/(micro)-stack IGBT has been developed. This is the first work to demonstrate the possibility of a high voltage, high current and high reliable flat-packaged MOS controlled device. The 20 mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not arranged. The great advantage of this structure is the double side cooling and the bondingless emitter wire. The /spl mu/-stack IGBT shows the high blocking voltage of 2.5 kV, the typical saturation voltage of 3.5 V at the collector current Ic=100 A, the turn-off capability of 3/spl times/Ic, and the good pressure contact for the electrical and thermal characteristics in the range from 100 to 800 kg/chip.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583631","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
A 2.5 kV 100 A /spl mu/(micro)-stack IGBT has been developed. This is the first work to demonstrate the possibility of a high voltage, high current and high reliable flat-packaged MOS controlled device. The 20 mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not arranged. The great advantage of this structure is the double side cooling and the bondingless emitter wire. The /spl mu/-stack IGBT shows the high blocking voltage of 2.5 kV, the typical saturation voltage of 3.5 V at the collector current Ic=100 A, the turn-off capability of 3/spl times/Ic, and the good pressure contact for the electrical and thermal characteristics in the range from 100 to 800 kg/chip.
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