W. Chen, G. Munns, D. Knightly, J. East, G. Haddad
{"title":"InGaAs/AlAs/InGaAsP resonant tunneling bipolar transistors grown by chemical beam epitaxy","authors":"W. Chen, G. Munns, D. Knightly, J. East, G. Haddad","doi":"10.1109/CORNEL.1993.303098","DOIUrl":null,"url":null,"abstract":"Resonant tunneling bipolar transistors (RTBT's) have been systematically studied using chemical beam epitaxy (CBE) for the first time. The RTBT structure studied is a InP-based transistor, consisting of single or multiple AlAs/In/sub 0.75/Ga/sub 0.25/As/AlAs RTD's in the emitter layer of a conventional heterojunction bipolar transistor (HBT) and an InGaAs or InGaAsP collector layer. Using the InGaAsP collector layer, the RTBT showed an improvement of breakdown voltage from 4 V to 10 V. The averaged DC /spl beta/'s are around 10 and 20 at 300 K and 77 K, respectively. In the transfer I-V characteristics, the RTBT showed 1 to 4 negative differential transconductance (NDT) peaks with peak-to-valley current ratios of 1.5 to 5.28 at 300 K. Using such NDT peaks, several RTBT digital functions were demonstrated at room temperature, including a frequency multiplier and exclusive NOR gate.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303098","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Resonant tunneling bipolar transistors (RTBT's) have been systematically studied using chemical beam epitaxy (CBE) for the first time. The RTBT structure studied is a InP-based transistor, consisting of single or multiple AlAs/In/sub 0.75/Ga/sub 0.25/As/AlAs RTD's in the emitter layer of a conventional heterojunction bipolar transistor (HBT) and an InGaAs or InGaAsP collector layer. Using the InGaAsP collector layer, the RTBT showed an improvement of breakdown voltage from 4 V to 10 V. The averaged DC /spl beta/'s are around 10 and 20 at 300 K and 77 K, respectively. In the transfer I-V characteristics, the RTBT showed 1 to 4 negative differential transconductance (NDT) peaks with peak-to-valley current ratios of 1.5 to 5.28 at 300 K. Using such NDT peaks, several RTBT digital functions were demonstrated at room temperature, including a frequency multiplier and exclusive NOR gate.<>
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