Light and heavy charge carrier caused breakdown of silicon p-n junction

T. Purītis
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引用次数: 2

Abstract

The initiation of impact ionisation is known to come mostly from light charge carriers. Transition from avalanche breakdown to thermoelectric breakdown, i.e., transition from light to heavy charge carrier caused breakdown is analysed in several microplasmas with increase in ambient temperature. Transition from light to heavy charge carrier caused secondary breakdown at increase current is analysed.
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轻、重载流子引起硅p-n结击穿
已知撞击电离的起始主要来自轻载流子。分析了几种微等离子体随环境温度的升高从雪崩击穿到热电击穿的转变,即由轻载流子到重载流子引起的击穿转变。分析了电流增大时载流子由轻载流子向重载流子转变引起的二次击穿。
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