{"title":"Low voltage electrostatic 90° turning flap for reflective MEMS display","authors":"F. Jutzi, F. Gueissaz, W. Noell, N. D. de Rooij","doi":"10.1109/OMEMS.2010.5672177","DOIUrl":null,"url":null,"abstract":"A low voltage electrostatically actuated 90° turning flap is modeled and fabricated. The application is a new kind reflective, low-power, MEMS-based display with high contrast and reflectance. The system consists of a poly-silicon flap fabricated onto a silicon substrate with a transparent counter electrode on glass and a device layer of a silicon-on-insulator (SOI) wafer as spacer in between them. Actuation voltages down to 20V are achieved.","PeriodicalId":421895,"journal":{"name":"2010 International Conference on Optical MEMS and Nanophotonics","volume":"220 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Optical MEMS and Nanophotonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEMS.2010.5672177","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A low voltage electrostatically actuated 90° turning flap is modeled and fabricated. The application is a new kind reflective, low-power, MEMS-based display with high contrast and reflectance. The system consists of a poly-silicon flap fabricated onto a silicon substrate with a transparent counter electrode on glass and a device layer of a silicon-on-insulator (SOI) wafer as spacer in between them. Actuation voltages down to 20V are achieved.
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