An X-Band Robust GaN Low-Noise Amplifier MMIC with sub 2 dB Noise Figure

Abstract

This paper presents a low-noise amplifier (LNA) operating between 8−11 GHz. Measurement results show that the LNA has a gain of more than 20 dB while achieving a noise figure of less than 2 dB. The three stage topology achieves high linearity, providing an OIP3 of 29 dBm at 0.6 W power dissipation. The robustness tests show that the circuit survives to at least 2.5 W (34 dBm) input power. With a size of just 2.8 × 1.3 mm2(3.6 mm2) the presented LNA is compact when compared to the state of the art. The circuit is realized using the 0.25 μm Power GaN/SiC HEMT process by WIN Semiconductor.