Spin torques estimation and magnetization dynamics in dual barrier resonant tunneling penta-layer magnetic tunnel junctions

N. Mojumder, C. Augustine, D. Nikonov, K. Roy
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引用次数: 4

Abstract

We investigate electronic transport and magnetization dynamics associated with current induced spin-torque effects in dual barrier magnetic tunnel junctions using Non-Equilibrium Green's Function formalism and Landau-Lifshitz- Gilbert (LLG) equation self-consistently. In a dual barrier penta-layer MTJ, a set of geometry and band-structure parameters including the free-layer thickness, oxide barrier height, width of the tunneling barrier and applied voltage jointly determines the position of resonant peaks and valleys within the energy range of interest. The combined effect of these design parameters to enhance the in-plane and out-of-plane spin-torque efficiencies in both aligned and anti-aligned penta-layer MTJs [Fig. 1] has been studied comprehensively. We quantify the impact of non-monotonic quantum well states for majority and minority spin electrons inside the thin free layer on the spin-torque effects in penta-layer MTJs. We essentially explore the design space for both the aligned and anti-aligned penta-layer MTJs optimized for read/write stabilities, improved TMR and low power. The crucial role of anti-aligned penta-layer MTJs in reducing the Energy-Delay-Product (EDP) during write over tri-layer MTJs has also been reported quantitatively.
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双势垒共振隧道五层磁隧道结的自旋转矩估计和磁化动力学
利用非平衡格林函数形式和Landau-Lifshitz- Gilbert (LLG)方程,自洽地研究了双势垒磁隧道结中与电流诱导自旋转矩效应相关的电子输运和磁化动力学。在双势垒五层MTJ中,包括自由层厚度、氧化势垒高度、隧道势垒宽度和外加电压在内的一组几何和能带结构参数共同决定了谐振峰和谐振谷在目标能量范围内的位置。本文对这些设计参数对对齐和反对齐五层mtj的面内和面外旋转转矩效率的综合影响进行了全面研究[图1]。我们量化了薄自由层内多数和少数自旋电子的非单调量子阱态对五层mtj中自旋扭矩效应的影响。我们从本质上探索了对齐和反对齐五层mtj的设计空间,优化了读写稳定性,提高了TMR和低功耗。反对齐五层MTJs在减少三层MTJs写入过程中的能量延迟积(EDP)方面的关键作用也有定量报道。
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