Hong-hyun Park, W. Choi, M. A. Pourghaderi, Jongchol Kim, U. Kwon, D. Kim
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引用次数: 3
Abstract
We present quantum transport simulation results of vertically stacked multiple silicon nanowire (SiNW) FETs based on the non-equilibrium Green's function (NEGF) method. In order to consider more realistic device conditions such as complex geometry of the multi-channel FETs andvarious carrier scattering processes, we improved physical models and numerical techniques forthe NEGF simulations.
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