{"title":"A high gain CMOS operational amplifier with negative conductance gain enhancement","authors":"J. Yan, R. Geiger","doi":"10.1109/CICC.2002.1012835","DOIUrl":null,"url":null,"abstract":"A fully differential CMOS operational amplifier using a negative conductance gain enhancement technique is presented. The amplifier was fabricated in an AMI 0.5 /spl mu/m CMOS process with an active area of 0.17 mm/sup 2/. With a 3 V supply, a DC gain of more than 80 dB was measured. The gain exceeded 60 dB for a 240 mV output swing.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2002.1012835","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24
Abstract
A fully differential CMOS operational amplifier using a negative conductance gain enhancement technique is presented. The amplifier was fabricated in an AMI 0.5 /spl mu/m CMOS process with an active area of 0.17 mm/sup 2/. With a 3 V supply, a DC gain of more than 80 dB was measured. The gain exceeded 60 dB for a 240 mV output swing.
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