F. Rivai, S. L. Ting, P. T. Ng, A. Teo, A. Quah, P. K. Tan, C. Q. Chen
{"title":"Application of Cross-Section EBIC to Localize Junction Anomaly","authors":"F. Rivai, S. L. Ting, P. T. Ng, A. Teo, A. Quah, P. K. Tan, C. Q. Chen","doi":"10.1109/IPFA55383.2022.9915746","DOIUrl":null,"url":null,"abstract":"Junction profile anomalies are one of most challenging failures to localize as the abnormal junction profile is usually difficult to be visualized. Thus, typical failure process relies heavily on electrical characterization of the junction profiles to hypothesize the failure. In this paper, a case study was described to demonstrate the effective use of Cross-Section EBIC to reveal incoming substrate anomaly in the N-type epitaxy layer thickness resulting in product low yield.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA55383.2022.9915746","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Junction profile anomalies are one of most challenging failures to localize as the abnormal junction profile is usually difficult to be visualized. Thus, typical failure process relies heavily on electrical characterization of the junction profiles to hypothesize the failure. In this paper, a case study was described to demonstrate the effective use of Cross-Section EBIC to reveal incoming substrate anomaly in the N-type epitaxy layer thickness resulting in product low yield.