K. Deng, Ming-Da Tsai, Chin-Shen Lin, Kun-You Lin, Huei Wang, S.H. Wang, W. Lien, G.J. Chem
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引用次数: 24
Abstract
A Ku-band monolithic low-noise amplifier is presented in this paper. This LNA fabricated in commercial 0.18-/spl mu/m CMOS technology is a two-stage common-source design instead of cascode configuration for lower noise performance. This CMOS LNA demonstrates a gain of better than 10 dB and a NF of better than 3.2 dB from 14 to 15 GHz. The measured output P/sub 1dB/ is about 5.2 dBm and input IP3 is 1.6 dBm. The chip size including all testing pads is 0.88 /spl times/ 0.77 mm/sup 2/.
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