Radiation Hardened Analog-to-Digital Convertor with Automatic Offset Voltage Compensation

V. Felitsyn, A. Bakerenkov, A. Zhukov, V. Butuzov, Y. Bocharov, V. Pershenkov, A. Rodin, V. Telets, V. Belyakov
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Abstract

Radiation hardened ADC with automatic offset voltage compensation was developed. TID radiation effect in the ADC was investigated at different temperatures. The designed ADC devices demonstrate high radiation hardness. Up to total dose level 100 krad(Si) any significant radiation induced drift didn't observed in transfer characteristics of all irradiated devices. It is achieved by using techniques such as application of automatic offset voltage compensation circuit together with enclosed layout transistors (ELT), located in ADC control logic. Also, edge-less n-channel MOSFETs with additional guard rings were used to increase the radiation hardness of digital interface and control logic of ADC. In contrast with control logic ELT not used in interface logic. Thus significant degradation of digital interface power supply current was observed unlike control logic power supply. Developed device can be considered as a good technical decision for self-diagnostic systems of electronic devices proposed for application under ionizing radiation impact, especially for systems of spacecrafts and satellites.
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具有自动失调电压补偿的抗辐射模数转换器
研制了具有自动失调电压补偿功能的抗辐射ADC。研究了不同温度下的辐射效应。所设计的ADC器件具有较高的辐射硬度。在总剂量水平为100krad (Si)时,所有辐照器件的转移特性均未观察到明显的辐射诱发漂移。它是通过在ADC控制逻辑中加入自动失调电压补偿电路和封闭布局晶体管(ELT)等技术来实现的。此外,采用附加保护环的无边n沟道mosfet来提高数字接口的辐射硬度和ADC的控制逻辑。与控制逻辑相反,接口逻辑中不使用ELT。因此,与控制逻辑电源不同,观察到数字接口电源电流的显著退化。对于电离辐射冲击下应用的电子设备,特别是航天器和卫星系统的自诊断系统来说,该装置的研制是一个很好的技术决策。
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