{"title":"Compact Analytical Model of Nanowire Junctionless ISFET","authors":"A. Yesayan, J. Sallese","doi":"10.23919/MIXDES52406.2021.9497641","DOIUrl":null,"url":null,"abstract":"In this work, we present a simple compact model for junctionless ion-sensitive FETs (JL ISFET) operating in depletion. The sensitivity dependence on nanowire physical and geometrical parameters are discussed as guidelines for the device optimization. The model validation with COMSOL Multiphysics simulations is presented.","PeriodicalId":375541,"journal":{"name":"2021 28th International Conference on Mixed Design of Integrated Circuits and System","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 28th International Conference on Mixed Design of Integrated Circuits and System","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MIXDES52406.2021.9497641","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this work, we present a simple compact model for junctionless ion-sensitive FETs (JL ISFET) operating in depletion. The sensitivity dependence on nanowire physical and geometrical parameters are discussed as guidelines for the device optimization. The model validation with COMSOL Multiphysics simulations is presented.
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