GaN HEMT based Ku band LNA and SPDT Switch for Transmit-Receive application

Abstract

This paper presents Monolithic Microwave Integrated circuit low noise amplifier (LNA) and single pole double throw switch (SPDT) circuits designed and fabricated with using 150 nm Gallium Nitride on SiC process of UMS, France. This MMIC LNA exhibits a noise figure of 2.5 dB with an associated gain of 25 dB in a chip area of 3.5 mm x 1.8 mm at Ku band. The designed and fabricated MMIC SPDT switch has an insertion loss less than 1.2 dB with an isolation better than 45 dB throughout the operating frequency band of 15.5 GHz - 17.5 GHz. The chip dimensions of SPDT switch is 1.5 mm X 3.5 mm. These MMICs operating at Ku-Band are suitable for integration in RF front-end chip for phased array radar applications.