Junsung Park, Minjae Kim, Jae‐Hyung Jang, Sung-Min Hong
{"title":"Properties of Conductive Oxygen Vacancies and Compact Modeling of IV Characteristics in HfO2 Resistive Random-Access-Memories","authors":"Junsung Park, Minjae Kim, Jae‐Hyung Jang, Sung-Min Hong","doi":"10.23919/SISPAD49475.2020.9241604","DOIUrl":null,"url":null,"abstract":"The HfO2-based resistive random-access-memory (RRAM) is studied. In the first part, two parameters of oxygen vacancies are extracted. The migration barrier of the oxygen vacancy (or the extended Frenkel pair) is calculated. The resistivity of a filament is also calculated. In the second part, an existing compact model for the RRAM is implemented and its results are compared with the experimental data","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"437 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SISPAD49475.2020.9241604","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The HfO2-based resistive random-access-memory (RRAM) is studied. In the first part, two parameters of oxygen vacancies are extracted. The migration barrier of the oxygen vacancy (or the extended Frenkel pair) is calculated. The resistivity of a filament is also calculated. In the second part, an existing compact model for the RRAM is implemented and its results are compared with the experimental data
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
