{"title":"Influence of temperature on the threshold voltage and subthreshold slope of strained-Si/SiGe MOSFETs with polysilicon gates","authors":"A. Biswas, Moumita Basak Nath","doi":"10.1109/ELECTRO.2009.5441179","DOIUrl":null,"url":null,"abstract":"In this paper, analytical models for threshold voltage Vt and subthreshold slope S for biaxially strained-Si channel nMOSFETs are proposed. Analytical approaches for predicting Vt and S are developed by considering the effect of strain on material and transport parameters, the effect of bandgap narrowing due to heavy channel doping, poly depletion effects and quantum mechanical effects for a wide temperature range 77 to 550 K. Accuracy of models have been verified by comparing analytical results obtained from the proposed model with the reported experimental data. Moreover, the model provides a physical insight for the variation of Vt and S for strained Si/ SiGe MOSFETs over a large temperature range.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELECTRO.2009.5441179","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this paper, analytical models for threshold voltage Vt and subthreshold slope S for biaxially strained-Si channel nMOSFETs are proposed. Analytical approaches for predicting Vt and S are developed by considering the effect of strain on material and transport parameters, the effect of bandgap narrowing due to heavy channel doping, poly depletion effects and quantum mechanical effects for a wide temperature range 77 to 550 K. Accuracy of models have been verified by comparing analytical results obtained from the proposed model with the reported experimental data. Moreover, the model provides a physical insight for the variation of Vt and S for strained Si/ SiGe MOSFETs over a large temperature range.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
