{"title":"Highly robust oxide thin film transistors with split active semiconductor and source/drain electrodes","authors":"Suhui Lee, Di Geng, Ling Li, Ming Liu, Jin Jang","doi":"10.1109/IEDM.2017.8268350","DOIUrl":null,"url":null,"abstract":"We report extremely stable and high performance etch-stopper (E/S) a-IGZO TFT on plastic substrate by using split active oxide semiconductor and source/drain electrodes. The a-IGZO TFTs exhibit high mobility over 70cm2/Vs and extremely stable under positive bias stress and mechanical stress. Therefore, this technology can be used for the manufacturing of high resolution flexible AMOLED displays.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"385 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2017.8268350","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
We report extremely stable and high performance etch-stopper (E/S) a-IGZO TFT on plastic substrate by using split active oxide semiconductor and source/drain electrodes. The a-IGZO TFTs exhibit high mobility over 70cm2/Vs and extremely stable under positive bias stress and mechanical stress. Therefore, this technology can be used for the manufacturing of high resolution flexible AMOLED displays.
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