M. Ramón, A. Gupta, C. Corbet, D. Ferrer, H. Movva, G. Carpenter, L. Colombo, G. Bourianoff, M. Doczy, D. Akinwande, E. Tutuc, S. Banerjee
{"title":"Graphene field-effect transistors using large-area monolayer graphene grown by chemical vapor deposition on Co thin films","authors":"M. Ramón, A. Gupta, C. Corbet, D. Ferrer, H. Movva, G. Carpenter, L. Colombo, G. Bourianoff, M. Doczy, D. Akinwande, E. Tutuc, S. Banerjee","doi":"10.1109/DRC.2011.5994446","DOIUrl":null,"url":null,"abstract":"There has been great interest in methods for the synthesis of high-quality, large-area graphene films, as required for practical applications in the electronics industry. In particular, recent developments in chemical vapor deposition (CVD) methods have shown a promising approach to grow large-area graphene on metal substrates by catalyzed CVD growth [1]. Reports of CVD growth on Cu and Ni are common [1–3]; however, there have been few efforts to grow graphene on Co [4], and attempts to grow graphene on Co/SiO2/Si resulted in very small domains of predominantly multilayer graphene that were not suitable for transistor fabrication. Unlike Ni, Co is attractive due to the low lattice mismatch (< 2%) between graphene and the Co (0001) surface, and Co exhibits greater compatibility with Si than Cu, which is a deep trap in Si and a fast diffuser. Here we have demonstrated graphene field-effect transistors (GFETs) fabricated using large-area monolayer graphene grown by catalyzed CVD on Co films.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994446","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
There has been great interest in methods for the synthesis of high-quality, large-area graphene films, as required for practical applications in the electronics industry. In particular, recent developments in chemical vapor deposition (CVD) methods have shown a promising approach to grow large-area graphene on metal substrates by catalyzed CVD growth [1]. Reports of CVD growth on Cu and Ni are common [1–3]; however, there have been few efforts to grow graphene on Co [4], and attempts to grow graphene on Co/SiO2/Si resulted in very small domains of predominantly multilayer graphene that were not suitable for transistor fabrication. Unlike Ni, Co is attractive due to the low lattice mismatch (< 2%) between graphene and the Co (0001) surface, and Co exhibits greater compatibility with Si than Cu, which is a deep trap in Si and a fast diffuser. Here we have demonstrated graphene field-effect transistors (GFETs) fabricated using large-area monolayer graphene grown by catalyzed CVD on Co films.